JAEA
  • help
  • PC | SP
  • JP | EN
          
Refine your search：     
Report No.
 - 
Clear All
Search Results: Records 1-2 displayed on this page of 2
  • 1

Presentation/Publication Type

Initialising ...

Refine

Journal/Book Title

Initialising ...

Meeting title

Initialising ...

First Author

Initialising ...

Keyword

Initialising ...

Language

Initialising ...

Publication Year

Initialising ...

Held year of conference

Initialising ...

Save select records

Journal Articles

Challenge of the development of high performance SiC semiconductor devices

Oshima, Takeshi

Hoshasen To Sangyo, (105), p.12 - 18, 2005/03

http://ci.nii.ac.jp/naid/40006658308

no abstracts in English

Journal Articles

Change in the electrical characteristics of p-channel 6H-SiC MOSFETs by $$gamma$$-ray irradiation

Oshima, Takeshi; Ito, Hisayoshi

Proceedings of the 6th International Workshop on Radiation Effects on Semiconductor Devices for Space Application (RASEDA-6), p.191 - 194, 2004/10

no abstracts in English

2 (Records 1-2 displayed on this page)
  • 1